| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image pickup device for more characteristically forming an impurity layer, and for accurately forming matching positions, and for reducing noise. SOLUTION: This solid-state image pickup device is provided with: a first conductive semiconductor layer 4 having a first main surface 4a and a second main surface 4b opposite to the first main surface 4a and an image pickup element region 100a and a peripheral region 200; a light receiving part 10 formed on the first main surface of the semiconductor layer 4 in the image pickup element 100a for storing charge by photoelectric conversion; a second conductive type first impurity layer 12 for element separation region extended, surrounding the light receiving part 10, from the first main surface 4a of the semiconductor layer 4 to the middle to the semiconductor layer 4; and a second conductive type second impurity layer 13 for element separation reaching from the second main surface 4b of the semiconductor layer 4 to the bottom section of the first impurity layer 12. COPYRIGHT: (C)2010,JPO&INPIT |
