发明名称 |
LOW-COST SUBSTRATES HAVING HIGH-RESISTIVITY PROPERTIES AND METHODS FOR THEIR MANUFACTURE |
摘要 |
In one embodiment, the invention provides substrates that are structured so that devices fabricated in a top layer thereof have properties similar to the same devices fabricated in a standard high resistivity substrate. Substrates of the invention include a support having a standard resistivity, a semiconductor layer arranged on the support substrate having a high-resistivity, preferably greater than about 1000 Ohms-cm, an insulating layer arranged on the high-resistivity layer, and a top layer arranged on the insulating layer. The invention also provides methods for manufacturing such substrates. |
申请公布号 |
WO2010002515(A2) |
申请公布日期 |
2010.01.07 |
申请号 |
WO2009US44810 |
申请日期 |
2009.05.21 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;MAZURE, CARLOS;NGUYEN, BICH-YEN |
发明人 |
MAZURE, CARLOS;NGUYEN, BICH-YEN |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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