发明名称 LOW-COST SUBSTRATES HAVING HIGH-RESISTIVITY PROPERTIES AND METHODS FOR THEIR MANUFACTURE
摘要 In one embodiment, the invention provides substrates that are structured so that devices fabricated in a top layer thereof have properties similar to the same devices fabricated in a standard high resistivity substrate. Substrates of the invention include a support having a standard resistivity, a semiconductor layer arranged on the support substrate having a high-resistivity, preferably greater than about 1000 Ohms-cm, an insulating layer arranged on the high-resistivity layer, and a top layer arranged on the insulating layer. The invention also provides methods for manufacturing such substrates.
申请公布号 WO2010002515(A2) 申请公布日期 2010.01.07
申请号 WO2009US44810 申请日期 2009.05.21
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;MAZURE, CARLOS;NGUYEN, BICH-YEN 发明人 MAZURE, CARLOS;NGUYEN, BICH-YEN
分类号 H01L21/20 主分类号 H01L21/20
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