发明名称 METHOD AND APPARATUS FOR REFINING Si AND APPARATUS FOR PRODUCING REFINED Si FILM
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method and apparatus for refining Si efficiently performing refining of low-purity Si to high-purity Si so as to produce solar cell-grade Si from metal-grade Si, and an apparatus for producing a refined Si film. <P>SOLUTION: The method for refining Si includes: a step of chemically reacting low-purity Si with atomic hydrogen to form a hydride gas cluster containing a hydride gas B<SB>2</SB>H<SB>6</SB>comprising boron (B) to be removed and a hydride gas SiH<SB>4</SB>comprising Si; and a step of obtaining high-purity Si having higher purity than the low-purity Si by bringing the hydride gas cluster into collision against a heated body surface whose temperature is controlled to a range from the decomposition temperature of the hydride gas B<SB>2</SB>H<SB>6</SB>comprising boron (B) to be removed to the decomposition temperature of the hydride gas SiH<SB>4</SB>comprising Si to remove the boron (B) to be removed from the hydride gas cluster by fixing on the heated body surface. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010001170(A) 申请公布日期 2010.01.07
申请号 JP20080159567 申请日期 2008.06.18
申请人 OSAKA UNIV;SHARP CORP 发明人 DAISAN HIROMASA;YASUTAKE KIYOSHI;NAKAHAMA KOJI;FUNAKI TAKESHI
分类号 C01B33/039;C01B33/029;H01L31/04 主分类号 C01B33/039
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