发明名称 |
METHOD AND APPARATUS FOR REFINING Si AND APPARATUS FOR PRODUCING REFINED Si FILM |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method and apparatus for refining Si efficiently performing refining of low-purity Si to high-purity Si so as to produce solar cell-grade Si from metal-grade Si, and an apparatus for producing a refined Si film. <P>SOLUTION: The method for refining Si includes: a step of chemically reacting low-purity Si with atomic hydrogen to form a hydride gas cluster containing a hydride gas B<SB>2</SB>H<SB>6</SB>comprising boron (B) to be removed and a hydride gas SiH<SB>4</SB>comprising Si; and a step of obtaining high-purity Si having higher purity than the low-purity Si by bringing the hydride gas cluster into collision against a heated body surface whose temperature is controlled to a range from the decomposition temperature of the hydride gas B<SB>2</SB>H<SB>6</SB>comprising boron (B) to be removed to the decomposition temperature of the hydride gas SiH<SB>4</SB>comprising Si to remove the boron (B) to be removed from the hydride gas cluster by fixing on the heated body surface. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
申请公布号 |
JP2010001170(A) |
申请公布日期 |
2010.01.07 |
申请号 |
JP20080159567 |
申请日期 |
2008.06.18 |
申请人 |
OSAKA UNIV;SHARP CORP |
发明人 |
DAISAN HIROMASA;YASUTAKE KIYOSHI;NAKAHAMA KOJI;FUNAKI TAKESHI |
分类号 |
C01B33/039;C01B33/029;H01L31/04 |
主分类号 |
C01B33/039 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|