| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implantation device for making both compatible in restraint of rotation of a wafer and the uniform temperature distribution in the wafer, during ion implantation. SOLUTION: This ion implantation device has a holding means for holding the wafer W and turning the wafer W along the circumference, and performs the ion implantation in the wafer W by using an ion beam with which an area overlapping with a part of the circumference is irradiated. The holding means has three or more of holding pins 20 for holding the wafer W by abutting on the peripheral edge of the wafer W. The holding pins 20 include a first holding pin 20A in which an abutting part with the peripheral edge of at least the wafer uses a thermosetting resin or a photo-curing resin as a forming material, and a second holding pin 20B in which at least an abutting part with the peripheral edge of the wafer W is composed of a forming material containing graphite, and is characterized in that among a plurality of holding pins 20, at least a holding pin 20 positioned on the rearmost side to the rotational direction of the wafer W, is the first holding pin 20A. COPYRIGHT: (C)2010,JPO&INPIT |
