发明名称 |
Patterned Substrate for Hetero-epitaxial Growth of Group-III Nitride Film |
摘要 |
A circuit structure includes a substrate and a film over the substrate and including a plurality of portions allocated as a plurality of rows. Each of the plurality of rows of the plurality of portions includes a plurality of convex portions and a plurality of concave portions. In each of the plurality of rows, the plurality of convex portions and the plurality of concave portions are allocated in an alternating pattern.
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申请公布号 |
US2010001375(A1) |
申请公布日期 |
2010.01.07 |
申请号 |
US20080166034 |
申请日期 |
2008.07.01 |
申请人 |
YU CHEN-HUA;CHEN DING-YUAN |
发明人 |
YU CHEN-HUA;CHEN DING-YUAN |
分类号 |
H01L29/04 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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