发明名称 Patterned Substrate for Hetero-epitaxial Growth of Group-III Nitride Film
摘要 A circuit structure includes a substrate and a film over the substrate and including a plurality of portions allocated as a plurality of rows. Each of the plurality of rows of the plurality of portions includes a plurality of convex portions and a plurality of concave portions. In each of the plurality of rows, the plurality of convex portions and the plurality of concave portions are allocated in an alternating pattern.
申请公布号 US2010001375(A1) 申请公布日期 2010.01.07
申请号 US20080166034 申请日期 2008.07.01
申请人 YU CHEN-HUA;CHEN DING-YUAN 发明人 YU CHEN-HUA;CHEN DING-YUAN
分类号 H01L29/04 主分类号 H01L29/04
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