发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
Stable contact hole forming is attained even when an aluminum oxide film is present between layers provided with contact holes. The process comprises the steps of forming a first element layer on a semiconductor substrate; forming a first interlayer insulating film on the first element layer; forming a second element layer on the first interlayer insulating film; forming a second interlayer insulating film on the second element layer; forming a hole resist pattern on the second interlayer insulating film; conducting a first etching for forming of holes by etching the second interlayer insulating film; and conducting a second etching for extending of holes to the first element layer by etching the first interlayer insulating film.
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申请公布号 |
US2010001372(A1) |
申请公布日期 |
2010.01.07 |
申请号 |
US20090500262 |
申请日期 |
2009.07.09 |
申请人 |
FUJITSU MICROELECTRONICS LIMITED |
发明人 |
MIYAZAKI YUKIMASA;NAGAI KOUICHI;KIKUCHI HIDEAKI |
分类号 |
H01L29/92;H01L21/02 |
主分类号 |
H01L29/92 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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