发明名称 |
Flash Memory Devices that Utilize Age-Based Verify Voltages to Increase Data Reliability and Methods of Operating Same |
摘要 |
Disclosed is a method of verifying a programmed condition of a flash memory device, being comprised of: determining a level of an additional verifying voltage in response to the number of programming/erasing cycles of memory cells; conducting a verifying operation to programmed memory cells with an initial verifying voltage lower than the additional verifying voltage; and selectively conducting an additional verifying operation with the additional verifying voltage to the program-verified memory cells in response to the number of programming/erasing cycles.
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申请公布号 |
US2010002523(A1) |
申请公布日期 |
2010.01.07 |
申请号 |
US20090558717 |
申请日期 |
2009.09.14 |
申请人 |
PARK KI-TAE;KIM YONG-SEOK;KIM KI-NAM;LEE YEONG-TAEK |
发明人 |
PARK KI-TAE;KIM YONG-SEOK;KIM KI-NAM;LEE YEONG-TAEK |
分类号 |
G11C16/06;G11C16/04 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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