发明名称 |
TRIGGERED SILICON CONTROLLED RECTIFIER FOR RF ESD PROTECTION |
摘要 |
An ESD protection circuit has a polysilicon bounded SCR connected between a signal input/output interface contact of the integrated circuit and a power supply connection of the integrated circuit and a biasing circuit. The biasing circuit is connected to the polysilicon bounded SCR to bias the polysilicon bounded SCR to turn on more rapidly during the ESD event. The biasing circuit is formed by at least one polysilicon bounded diode and a first resistance. Other embodiments of the biasing circuit include a resistor/capacitor biasing circuit and a second diode triggering biasing circuit.
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申请公布号 |
US2010001283(A1) |
申请公布日期 |
2010.01.07 |
申请号 |
US20090559401 |
申请日期 |
2009.09.14 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD.;AGILENT TECHNOLOGIES, INC. |
发明人 |
MANNA INDRAJIT;FOO LO KENG;YA TAN PEE;FILIPPI RAYMOND |
分类号 |
H01L29/04;H01L21/331;H01L27/02;H01L29/73;H01L29/74 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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