MANUFACTURE OF SEMICONDUCTOR DEVICES

摘要

Methods of manufacturing semiconductor devices, such as insulated-gate field effect power transistors or diode structures, are provided. The devices include a semiconductor body (2) having first region (12) of a first conductivity type, and a field plate (18,22,30) dielectrically coupled to the first region and extending into the semiconductor body adjacent to the first region. The methods include the steps of providing a semiconductor body (2) which has substantially uniform doping in the first region and implanting additional dopant of thefirst conductivity type into the first region such that the dopant concentration in the first region increases with depth.