| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having an excellent heat dissipating property and a superior efficiency on a manufacture, also having neither deterioration of a reliability nor generation of a voltage potential in a heat sink because a heating and a partial high temperature are not generated in a junction among a circuit pattern and an electrode and a lead for a semiconductor. <P>SOLUTION: The semiconductor device 1 generating neither heating nor partial heat generation, and deteriorating no reliability is manufactured by using an ultrasonic junction for junctions among an insulating substrate 10 with a pattern and a semiconductor chip 20 and the lead 40. The potential is not generated in the heat sink 30 by preventing a contact with the heat sink 30 of the lead 40, and the semiconductor device 1 having the excellent heat dissipating property is manufactured. The semiconductor device 1 easily joining the insulating substrate 10 with the pattern, the semiconductor chip 20 and the lead 40, and improving the efficiency on the manufacture is manufactured by pinching a part of the lead 40 to projecting sections 10a. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
