| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a thin-film transistor in which a crystal grain is large and electrical characteristics are improved, while controlling cost increase. Ž<P>SOLUTION: The method of manufacturing a thin-film transistor includrd: a first process which forms a heat conduction layer 37 consisting of a material having high thermal conductivity on the surface of a substrate 10 which has a flat surface; a second process which carries out patterning of the heat conducting layer 37 so that at least a part of the heat conducting layer 37 becomes an inclination part 38 inclined with respect to the surface; a third process which forms an amorphous silicon layer 32 on the substrate 10, to cover at least the inclined part 38; a fourth process which crystallizes the amorphous silicon layer 32, through laser annealing and forms a polycrystalline silicon layer 34; and a fifth process which forms a gate electrode 42 on the polycrystalline silicon layer 34 so that at least a part thereof overlaps the inclined part 38 in a planar view. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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