发明名称 FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide an inexpensive film deposition method and an inexpensive film deposition apparatus which perform high-temperature anneal of a film or deposit a thermal CVD film on a surface of a substrate while maintaining the substrate at low temperature. Ž<P>SOLUTION: When a plurality of high-temperature gas beams 2b, 2c are blown with a predetermined spacing between them and in a substantially orthogonal direction onto a surface of a substrate 1 supported on a supporting stand 4 which can be cooled, only the surface of the substrate can be annealed. At the same time, pyrolysis gas 7 of the deposition property for depositing a film is fed to a high-temperature space 6 demarcated by the high-temperature gas beams 2b, 2c and the surface of the substrate 1, active species of the gas are generated through the pyrolysis thereof, and blown to the surface of the substrate 1. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010001541(A) 申请公布日期 2010.01.07
申请号 JP20080162332 申请日期 2008.06.20
申请人 PHILTECH INC 发明人 FURUMURA YUJI;NISHIHARA SHINJI;MURA NAOMI
分类号 C23C16/452;H01L21/205;H01L21/316;H01L21/318 主分类号 C23C16/452
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