发明名称 |
FLASH MEMORY DEVICE REDUCING NOISE OF COMMON SOURCE LINE, PROGRAM VERIFY METHOD THEREOF, AND MEMORY SYSTEM INCLUDING THE SAME |
摘要 |
A flash memory device controls a common source line voltage and performs a program verify method. A plurality of memory cells is connected between a bit line and the common source line. A data input/output circuit is connected to the bit line and is configured to store data to be programmed in a selected memory cell of the plurality of memory cells. The data input/output circuit maintains data to be programmed within the data input/output circuit during a program verify operation, and decreases noise in the common source line by selectively precharging the bit line based on the data to be programmed.
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申请公布号 |
US2010002507(A1) |
申请公布日期 |
2010.01.07 |
申请号 |
US20090472639 |
申请日期 |
2009.05.27 |
申请人 |
KANG SANG-GU;LEE HEE-WON;LEE JU-SEOK;SONG JUNG-HO |
发明人 |
KANG SANG-GU;LEE HEE-WON;LEE JU-SEOK;SONG JUNG-HO |
分类号 |
G11C16/04;G11C7/10;G11C16/06 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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