发明名称 |
METHOD FOR THIN-FILM FORMATION AND APPARATUS FOR THIN-FILM FORMATION |
摘要 |
<p>Disclosed is a method for thin-film formation that forms a thin film on a surface of an object (W) to be treated, the surface having a concave (6) formed thereon. The method comprises a titanium film forming step of forming a first titanium nitride film on a surface of the object including the inner surface of the concave in such a manner that a titanium film (100) is formed on the surface of the object including the inner surface of the concave using a titanium compound gas and a reducing gas, a nitriding step of nitriding the whole titanium film formed in the titanium film forming step using a nitriding gas, a step of performing the above steps in the above order at least once to form a first titanium nitride film (104), and a step of forming a second titanium nitride film (106) by a titanium nitride film depositing step of depositing the second titanium nitride film (106) directly on the first titanium nitride film (104).</p> |
申请公布号 |
WO2010001931(A1) |
申请公布日期 |
2010.01.07 |
申请号 |
WO2009JP62052 |
申请日期 |
2009.07.01 |
申请人 |
TOKYO ELECTRON LIMITED;NARUSHIMA KENSAKU;YAMASAKI HIDEAKI;KOAKUTSU MASATO |
发明人 |
NARUSHIMA KENSAKU;YAMASAKI HIDEAKI;KOAKUTSU MASATO |
分类号 |
C23C16/34;H01L21/285;H01L21/28;H01L21/3205;H01L21/768;H01L23/52 |
主分类号 |
C23C16/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|