发明名称 METHOD FOR THIN-FILM FORMATION AND APPARATUS FOR THIN-FILM FORMATION
摘要 <p>Disclosed is a method for thin-film formation that forms a thin film on a surface of an object (W) to be treated, the surface having a concave (6) formed thereon.  The method comprises a titanium film forming step of forming a first titanium nitride film on a surface of the object including the inner surface of the concave in such a manner that a titanium film (100) is formed on the surface of the object including the inner surface of the concave using a titanium compound gas and a reducing gas, a nitriding step of nitriding the whole titanium film formed in the titanium film forming step using a nitriding gas, a step of performing the above steps in the above order at least once to form a first titanium nitride film (104), and a step of forming a second titanium nitride film (106) by a titanium nitride film depositing step of depositing the second titanium nitride film (106) directly on the first titanium nitride film (104).</p>
申请公布号 WO2010001931(A1) 申请公布日期 2010.01.07
申请号 WO2009JP62052 申请日期 2009.07.01
申请人 TOKYO ELECTRON LIMITED;NARUSHIMA KENSAKU;YAMASAKI HIDEAKI;KOAKUTSU MASATO 发明人 NARUSHIMA KENSAKU;YAMASAKI HIDEAKI;KOAKUTSU MASATO
分类号 C23C16/34;H01L21/285;H01L21/28;H01L21/3205;H01L21/768;H01L23/52 主分类号 C23C16/34
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