METHOD FOR MANUFACTURING SOI SUBSTRATE

摘要

PURPOSE: A method for manufacturing an SOI is provided to increase yield of the SOI substrate with high crystallization by reducing a crystal defect. CONSTITUTION: An insulation layer(102) is formed on a single crystal semiconductor substrate(101). A bromination region(103) is formed on the single crystal semiconductor substrate by irradiating an ion beam to the single crystal semiconductor substrate through an insulation layer. The insulation layer with the bromination region is boned with one side of a support substrate(111). The single crystal semiconductor substrate is separated from the support substrate bonded with a single crystal semiconductor layer(112) by a heat process. The laser light is irradiated to the single crystal semiconductor layer. The surface of the single crystal semiconductor layer is etched. The plasma process is performed on the surface of the single crystal semiconductor layer.