| 摘要 |
PURPOSE: A method of forming an isolation layer of a semiconductor device is provided to suppress a leakage current by increasing the distance of a channel region of an adjacent high voltage device through a recess. CONSTITUTION: In a device, a semiconductor substrate(102) includes a first region(A) and a second region(B). A gate insulation film(104), a gate conductive film(106), and a hard mask film(108) are formed on the semiconductor substrate. A first photo resist pattern is formed on a hard mask film. A gate pattern is formed in the first region, and a first trench is formed in the second region. A first photo resist pattern is removed, and a second photoresist pattern is formed on a hard mask film. A second trench is formed in an element isolation region of the second region. The recess is formed at the lower part of the second trench.
|
