| 摘要 |
<p>PURPOSE: A method of manufacturing a semiconductor device is provided to align a post mask by performing a key-open after planarization process of a conductive film for a control gate. CONSTITUTION: In a device, a conductive film(102) for a tunnel insulating film(101) and a floating gate are formed on a semiconductor substrate(100). A trench(103) is formed by etching the conductive film for the floating gate, a tunnel insulating film, and the semiconductor substrate. An overlay vernier is formed at a scribe region of the semiconductor substrate. An element isolation film is formed by filling in the trench with the insulating film. The conductive film(106) for the dielectric film(105) and the control gate is formed on the whole structure including the element isolation film. The overlay vernier is exposed to the outside by eliminating the conductive film for the control gate.</p> |
