SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要
<p>PURPOSE: A semiconductor device and a method of manufacturing the same are provided to manufacture a thin film transistor having p-type and n-type metal oxide films by using the p-type and n-type metal oxide as an active layer of the thin film transistor. CONSTITUTION: A substrate is defined by a first area(A) and a second area. A first type thin film transistor is formed at a first area and has an N-type metal oxide active layer(130N). A second type thin film is formed on the second area and has a P- type metal oxide active layer(130P). The first type thin film transistor includes a first gate electrode(110N) having a part of overlapped with an N-type metal oxide active layer, and it also includes a first source and a drain electrode(150N,160N) having a part connected to the N type metal oxide active layer.</p>
申请公布号
KR20100000560(A)
申请公布日期
2010.01.06
申请号
KR20080060107
申请日期
2008.06.25
申请人
JUSUNG ENGINEERING CO., LTD.;KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
发明人
PARK, JAE WOO;KIM, CHUL HWAN;LEE, KYOO HWAN;LEE, CHANG JAE