| 摘要 |
<p>PURPOSE: A thin film transistor substrcate and a method of manufacturing the same are provided to improve an on/off property of a thin film transistor by forming at least one LDD contact hole. CONSTITUTION: A buffer layer(116) is formed on a substrate(101). An active layer(114) is formed on the surface of a substrate while placing a butter film on them. A gate insulating layer is formed on the active layer. A gate electrode(106) is formed to be overlapped with a channel area of an active layer and a gate insulating film. A source electrode and a drain electrode(108) are connected to area-source and drain region of the active layer through a first contact hole(124S) and a second contact hole(124D) passing through the inter-layer insulating film and gate insulating layer.</p> |
