| 摘要 |
PURPOSE: A method of forming a metal line of a semiconductor device is provided to form a metal line having a desired thickness by reducing dishing in forming the metal line in a trench. CONSTITUTION: In a device, gates are formed in the first region(A) and a second region(B) of a semiconductor substrate(102). The width of the gate formed in the second region is larger than that of the gate formed in the first region. The insulating film is formed in the space between gates. Trenches are formed on the gates, and a conductive film is formed on the trenches and the insulating film. A buffer film(118) is formed on the conductive film, and a gate electrode film(116a) is formed in the trench by performing a planarization process of a buffer film and the conductive film.
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