发明名称 |
MEMORY CIRCUIT USING A REFERENCE FOR SENSING |
摘要 |
A memory includes a plurality of memory cells, a sense amplifier coupled to at least one of the plurality of memory cells, a temperature dependent current generator comprising a plurality of selectable temperature dependent current sources for generating a temperature dependent current, a temperature independent current generator comprising a plurality of selectable temperature independent current sources for generating a temperature independent current, and a summer coupled to the temperature dependent current generator and the temperature independent current generator for combining the temperature dependent current and the temperature independent current to generate a reference current for use by the sense amplifier. A temperature coefficient of the reference current is approximately a same as a temperature coefficient of a memory cell current of at least one of the plurality of memory cells. |
申请公布号 |
EP2050097(A4) |
申请公布日期 |
2010.01.06 |
申请号 |
EP20070761789 |
申请日期 |
2007.05.03 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
CHOY, JON S.;AKHTER, TAHMINA |
分类号 |
G11C7/04 |
主分类号 |
G11C7/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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