发明名称 MEMORY CIRCUIT USING A REFERENCE FOR SENSING
摘要 A memory includes a plurality of memory cells, a sense amplifier coupled to at least one of the plurality of memory cells, a temperature dependent current generator comprising a plurality of selectable temperature dependent current sources for generating a temperature dependent current, a temperature independent current generator comprising a plurality of selectable temperature independent current sources for generating a temperature independent current, and a summer coupled to the temperature dependent current generator and the temperature independent current generator for combining the temperature dependent current and the temperature independent current to generate a reference current for use by the sense amplifier. A temperature coefficient of the reference current is approximately a same as a temperature coefficient of a memory cell current of at least one of the plurality of memory cells.
申请公布号 EP2050097(A4) 申请公布日期 2010.01.06
申请号 EP20070761789 申请日期 2007.05.03
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 CHOY, JON S.;AKHTER, TAHMINA
分类号 G11C7/04 主分类号 G11C7/04
代理机构 代理人
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