| 摘要 |
<p>PURPOSE: A semiconductor device and manufacturing of method the same are provided to improve the refresh characteristic and drain oil foot obstacle degradation by multiplying the channel length of the gate. CONSTITUTION: The element isolation film(102) for the active (A) is formed on the semiconductor substrate(100). The recess portion (R) having the depth appointed from the surface is formed in the active of the semiconductor substrate. The channel length modulation part (H) including the first concavo-convex region(H1) and the second concavo-convex region(H2) is formed in the inner side of the semiconductor substrate. The gate structure (G) projected from the semiconductor substrate is formed within the recess portion. The gate structure comprises the gate insulating layer(108) including insulator, and the gate conductive film(110) including the electric conduction material and the gate hard mask membrane(112).</p> |
