| 摘要 |
PURPOSE: A method of forming a gate dielectric layer in a semiconductor device is provided to reduce a process margin by preventing the step height between a low voltage region and a high voltage region of the semiconductor substrate. CONSTITUTION: A semiconductor substrate(202) comprises a first region(LV) and a second region(HV). A first hard mask film is formed on the first region of the semiconductor substrate. A gate insulating film is formed on the second region of the semiconductor substrate. A first hard mask film and gate insulating film are removed. A second hard mask film is formed on the first region of the semiconductor substrate. A high voltage gate insulating film(204a) is formed on the second region of the semiconductor substrate. The second hard mask film is removed, and a low voltage gate insulating film(204b) is formed on the first region of the semiconductor substrate.
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