发明名称 METHOD FOR FORMING NANO-STRUCTURE OF NICKEL SILICIDE USING REDOXREACTION OF NICKEL THIN LAYER
摘要 PURPOSE: A method for forming nickel silicide nano structure through oxide-reduction reaction of nickel thin film catalyst is provided to apply on various areas having different densities. CONSTITUTION: A method for forming a nickel silicide nano structure comprises: a step of forming a nickel layer(33) on a substrate(31); a step of regulating the amount of oxide film(34) formed on the nickel layer through oxidation or reduction; and a step of reacting reaction vapor containing the silicon with nickel layer and oxide film to synthesize the nickel silicide. The amount of oxide film is regulated by controlling oxidation time. The substrate is quartz substrate, ITO substrate, glass substrates or SiO2/Si substrate.
申请公布号 KR20100000541(A) 申请公布日期 2010.01.06
申请号 KR20080060078 申请日期 2008.06.25
申请人 POSTECH ACADEMY-INDUSTRY FOUNDATION 发明人 JO, MOON HO;KANG, KI BUM
分类号 B82B3/00;B82B1/00 主分类号 B82B3/00
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