| 发明名称 |
Method of light induced plating on semiconductors |
| 摘要 |
<p>Methods of light induced plating of nickel onto semiconductors are disclosed. The methods involve applying light at an initial intensity for a limited amount of time followed by reducing the intensity of the light for the remainder of the plating period to deposit nickel on a semiconductor.</p> |
| 申请公布号 |
EP2141750(A2) |
申请公布日期 |
2010.01.06 |
| 申请号 |
EP20090156612 |
申请日期 |
2009.03.30 |
| 申请人 |
ROHM AND HAAS ELECTRONIC MATERIALS LLC |
发明人 |
HAMM, GARY;JACQUES, DAVID J. |
| 分类号 |
H01L31/18;C25D5/02;H01L21/288;H01L31/0224 |
主分类号 |
H01L31/18 |
| 代理机构 |
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