发明名称 Polycrystalline silicon reactor
摘要 <p>A polycrystalline silicon reactor 1 which can prevent polycrystalline silicon which deposits on the surface of an electrode 5 holding a silicon seed rod 4 from being peeled off is provided. In a polycrystalline silicon reactor 1 which applies an electric current to a silicon seed rod 4 provided within a furnace, thereby heating the silicon seed rod 4, brings a source gas supplied into the furnace into reaction, and deposits polycrystalline silicon on the surface of the silicon seed rod 4, the reactor includes, at a bottom plate 2 (furnace bottom) of the furnace, an electrode holder 10 provided so as to be electrically insulated from the bottom plate 2 (furnace bottom), and a seed rod holding electrode 15 connected to the electrode holder 10, and holding the silicon seed rod 4 toward the upside. Concavo-convex portions (male thread portion) 15B exposed to a furnace atmosphere is provided at an outer peripheral surface of the seed rod holding electrode 15. </p>
申请公布号 EP2108619(A3) 申请公布日期 2010.01.06
申请号 EP20090155082 申请日期 2009.03.13
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 ENDOH, TOSHIHIDE;TEBAKARI, MASAYUKI;ISHII, TOSHIYUKI;SAKAGUCHI, MASAAKI
分类号 C01B33/035 主分类号 C01B33/035
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