PHOTO MASK AND MANUFACTURING METHOD OF A SEMICONDUCTOR USING THE SAME

摘要

PURPOSE: A photo mask and manufacturing method of a semiconductor using the same are provided to prevent the pattern size change according to the deformation of pattern. CONSTITUTION: The photosensitive film is spread on the semiconductor substrate having is the etched layer. The exposure process is performed by using the exposure mask for EUV. The light source which is income to the reflecting layer pattern(52) is reflected to the reflecting layer pattern. The photosensitive film is spread on the top of the semiconductor substrate. The light source absorbed into the absorber(42) is not exposed to the photosensitive film. The photosensitive pattern is formed by the photolithography process on the photosensitive film. The etched layer is etched by using the photosensitive pattern as the etching mask. The semiconductor device is formed by etching the etched layer.