MULTI BIT SONOS TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A multi bit SONOS transistor and method for manufacturing the same are provided to laminates the charge trapping layer on the semiconductor substrate and store multi-bit in the charge trapping layer. CONSTITUTION: The multi-bit SONOS transistor is arranged in the semiconductor device. In this case, the semiconductor device comprises the bottom electrode(110) and lower part oxide-nitride-oxide layer(120). The bottom electrode is arranged on the semiconductor substrate(100). The lower part ONO is arranged on the bottom electrode. The semiconductor device more includes the conductive layer(130), and the top oxide-nitride-oxide layer(160) and upper electrode(170). The conductive layer is arranged on the lower part oxide-nitride-oxide layer. The top oxide-nitride-oxide layer is arranged on the conductive layer. The upper electrode is arranged on the top oxide-nitride-oxide layer.