| 摘要 |
PURPOSE: An electrostatic discharge circuit and the method of making thereof are provided to steadily protect the internal circuit of the semiconductor device from the static electricity. CONSTITUTION: The N well(302) is formed on substrate. The buried insulating layer(301) electrically insulates N well from substrate. The third P+ type impurity region frame(303-305) is inserted in the first-N well. The first gate is formed on the semiconductor substrate between the second P+ type impurity region and the first P+ type impurity region. The second gate is formed on the semiconductor substrate between the third P+ type impurity area and the second P+ type impurity region. The first and second N+ type impurity region frames(308,309) are formed to be respectively contiguous to the first and the second gates. The grounding voltage lead (VSS) is connected to the first P+ type impurity region and the first N+ type impurity region. The source voltage terminal (VDD) is connected to the third P+ type impurity region and the second N+ type impurity region.
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