发明名称 CHEMICAL MECHANICAL POLISHING COMPOSITION
摘要 PURPOSE: An inhibitor composition is provided to suppress metal etching while maintaining high polishing removal rate of a metal layer, and to reduce defects such as dishing and erosion. CONSTITUTION: An inhibitor composition used for chemical mechanical polishing comprises at least imidazoline compound or triazole compound, or combination thereof; and sarcosine and its salt compound or its combination. The sarcosine and its salt compound comprises sarcosine, lauroyl sarcosine, N-acyl sarcosine, cocoyl sarcosine, oleoyl sarcosine, stearoyl sarcosine, myristoyl sarcosine, or their lithium salt, sodium salt, potassium salt, amine salt, or their mixture.
申请公布号 KR20100001785(A) 申请公布日期 2010.01.06
申请号 KR20080061836 申请日期 2008.06.27
申请人 UWIZ TECHNOLOGY CO., LTD. 发明人 CHANG SONG YUAN;LU MING HUI;HO MING CHE
分类号 C09K3/14 主分类号 C09K3/14
代理机构 代理人
主权项
地址