Electronic circuit comprising a diode connected MOS transistor with enhanced efficiency

摘要

The circuit (40) has a semiconductor layer, a diode-mounted transistor (M') i.e. n-channel metal oxide semiconductor transistor, including power terminals (S, D), and a substrate (B) that is isolated from the semiconductor layer, where the terminal (D) receives an oscillating signal (V1N). A gate (G) of the transistor and the substrate are connected to the terminal (D), where the transistor is designed such that threshold voltage of the transistor ranges between 0.1 - 0.3 volts. A filter is formed by a capacitor (C) and a resistor (R) and connected to the terminal (S).