| 摘要 |
<p>PURPOSE: A manufacturing method for a display is provided to implement excellent drive performance and reliability by mounting an advance transistor applied to SPC(Solid Phase Crystallization) as an active layer. CONSTITUTION: An active layer(130) is formed by performing the SPC(Solid Phase Crystallization) process on a first substrate. A buffer layer(131) of amorphous silicon(a-Si) is formed on an active layer under hydrogen of 90% ~ 97% and silane of 10% ~ 3%. An N-type impurity layer(132) is formed on the buffer layer, and the metal layer is formed in order to cover the N type impurity layer. The first etching method and the source(133a) and drain(133b) are formed by removing the metal layer, and the N-type impurity layer and the buffer layer are separate from a second etching.</p> |
