| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to prevent electric short by connecting a gate conductive part formed on a pin pattern to a landing plug. CONSTITUTION: An active area, a device isolation area, and a gate area are defined on a semiconductor substrate(100). A mask pattern exposing the gate area is formed on the semiconductor substrate. A recessed groove is formed on the active region by etching the exposed active area and device isolation area. An ion implantation area(110a,110) is formed on the oxide layer comprising the device isolation area and the lower side of the recessed groove by performing an ion implantation process. The pin pattern is formed on the semiconductor substrate by an etching process. The mask pattern is removed after the ion implantation process.</p> |
