发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 <p>PURPOSE: A semiconductor device and method of manufacturing the same are provided to effectively reduce the cell size and noise by forming the folded bit line structure on the semiconductor device. CONSTITUTION: The active pattern (P) has the pillar shape. The active pattern comprises the active area(P1,P2) having electrodes formed in the top and lower part. It is arranged so that the adjacent active areas of the heat each other cross. A plurality of bit lines (BL) is commonly close with the bottom electrode of active areas. The bit line forms the folded structure about adjacent active areas of the column of the pair. The gate(G1,G2) protects the side between the electrode formed in the top and lower part of active areas. A plurality of word line(WL1,WL2) is crossed across a plurality of bit lines. Word lines are commonly connected with gates of active areas.</p>
申请公布号 KR20100001854(A) 申请公布日期 2010.01.06
申请号 KR20080061932 申请日期 2008.06.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JEONG, HYEOK JE;WON, HYUNG SIK;CHUNG, SUNG WOONG
分类号 H01L29/78;H01L21/768 主分类号 H01L29/78
代理机构 代理人
主权项
地址