| 摘要 |
<p>PURPOSE: A method for forming semiconductor devices is provided to simplify the SPT process by giving the stable etching process condition. CONSTITUTION: The etched layer(102), and the underlayer(104) and reflection barrier layer are successively formed on the semiconductor substrate(100). The photosensitive pattern is formed by the lithographically processing. The reflective barrier pattern is formed by etching the reflection barrier layer. The relax material is spread on the top of the whole surface including the reflective barrier pattern and photosensitive pattern. The insulating layer is evaporated on the top of the whole surface. By etching the insulating layer in order to expose the relax material the space pattern(118) is formed. The relax material, and the photosensitive pattern and reflective barrier pattern are removed in order to leave the space pattern.</p> |
