LINE PATTERN IN NON-VOLATILE MEMORY DEVICE

摘要

PURPOSE: A line pattern in a non-volatile memory device is provided to reduce an error range of a manufacturing process by disconcerting a drain selection line and a source selection line through CD-SEM(Critical Dimension-Scanning Electron Microscope). CONSTITUTION: In a device, element isolation regions(120) and active region(110) are arranged in the semiconductor substrate as a line-shape alternately. A plurality of word lines(WL1~WLn) are arranged on the semiconductor substrate in order to cross with active regions. A pair of source selection lines(SSL) and drain select lines(DSL) are arranged in both sides of the word lines. A protrusion(150) is formed on one side of each source selection line. A source contact plug(130) is arranged between a pair of source selection lines. A drain contact plug(140) is arranged between a pair of drain selection lines.