| 摘要 |
<p>PURPOSE: A method of forming a semiconductor device is provided to improve the reliability of a photoresist pattern by using anti-reflective coating layer on which a developer can be removed easily suppressing reflection of exposure. CONSTITUTION: An anti-reflective coating layer is formed on a semiconductor substrate(100). A first baking process of solidifying the anti-reflective coating layer is performed. The anti-reflective coating layer is patterned and the anti-reflection pattern(102a) is formed. A cross-linking layer(102b) is formed on the sidewall of an opening(B) of the anti-reflection pattern In order to reduce the width of the opening. A junction area is formed in the semiconductor substrate exposed to the inside of the opening.</p> |
