| 摘要 |
PURPOSE: A polishing composition is provided to polish a silicon single crystal substrate at a high removal rate, thereby being suitable for polishing a silicon single crystal substrate. CONSTITUTION: A polishing composition comprises grains, piperazine, strong electrolyte salt, and water. The molar ratio of piperazine to strong electrolyte salt is within 0.07-1.2 and the content of piperazine is 0.02 mol/L or more. The content of strong electrolyte salt is 0.03 mol/L or more. The Zeta potential of the polishing composition is more than 40 mV compared with reference slurry consisting of the same kind and amount of grains and the balance of water.
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