| 摘要 |
PURPOSE: A semiconductor memory device is provided to improve operation speed by enabling column select signal through one NAND gate and one a buffering device. CONSTITUTION: In a device, a test controller(3) outputs a control signal and a voltage signal in response to a test signal. A pre-decoding part(4) outputs a column selection signal by decoding an address signal. A test controller includes a control signal generating part(31) outputting a control signal in response to the test signal. The test controller includes a voltage drive unit(32) outputting a voltage signal in response to the control signal. The pre-decoding part includes a decoding unit(41) which outputs the address decoding signal by decoding the address signal. The pre-decoding part includes a signal output part(42) outputting the address decoding signal to the column selection signal. |
