| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to increase a threshold voltage by forming a first ion implantation area with an NMOS type and a second ion implantation area with a PMOS type. CONSTITUTION: A device isolation area limiting an active region(102) is formed on a semiconductor substrate(100). A gate area is formed over the active area and the device isolation area. A first ion implantation area(110) is formed on the active area of the semiconductor substrate. A mask pattern exposing the gate region is formed on the semiconductor substrate. A recessed groove is formed on the active region. A recessed pin pattern(112) is formed on the device isolation area of the semiconductor substrate exposed through the mask pattern. A second ion implantation area(116) is formed on the side of the pin pattern by performing an ion implantation process.
|
