| 摘要 |
PURPOSE: A semiconductor device and method of manufacturing the same are provided to insulate projected copper metal lines and to prevent the generation of void. CONSTITUTION: The first insulating layer(105) having via hole (V) is formed on the semiconductor substrate(102) having down metal wiring(104). The via hole is electrically connected to the down metal wiring, the via hole exposes one part of the down metal wiring. The diffusion barrier(108) and copper seed film(110a) are successively formed on the surface and the first insulating layer of the via hole. The top metal line(110) is formed on the diffusion barrier. The anti oxidation layer(112) consisting of the silicon nitride layer is formed on the top metal line and the first insulating layer. The second insulating layer(114) like the low dielectric insulator layer is formed on the anti oxidation layer.
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