| 摘要 |
PURPOSE: A method for manufacturing of a semiconductor device is provided to prevent a bridge pattern of adjacent patterns by leaving a spacer and a SAC(Self-Aligned Contact) on the sided of the gate pattern. CONSTITUTION: A tunnel insulating film(101), a first conductive film(102), a dielectric film(103), and a second conductive film(104) are successively laminated on a semiconductor substrate(100). A gate pattern is formed by patterning the second conductive film, the dielectric film, and the first conductive film. A spacer(106) is formed on the sidewall of the gate pattern, and an SAC insulating film(107) and the interlayer insulation film(108) are formed on the whole structure including the spacer. The SAC insulating film formed on the top of the gate pattern is removed and exposed to the outside through an CMP(Chemical Mechanical Polishing). A metal gate film is formed on the second conductive film.
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