| 摘要 |
PURPOSE: An optical proximity correction method is provided to correct an optical proximity effect by securing two dimensional data extracted based on PNL(Patterning Net List) of a full chip layer. CONSTITUTION: A wafer image is formed(S1), and two dimensional data is secured based on a PNL(Patterning Net List) of the wafer image(S2). Two dimensional data is calibrated(S3). An OPC model is performed through the calibration(S4). An optical proximity effect is corrected by using the OPC modeling(S5). The wafer image is a photosensitive pattern formed by an exposure process and development process using the exposure mask which forms a desired layout.
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