发明名称 |
Method of forming a photodiode that reduces the effects of surface recombination sites |
摘要 |
The loss of photogenerated electrons to surface electron-hole recombination sites is minimized by utilizing a first p-type surface region to form a depletion region that functions as a first barrier that repels photogenerated electrons from the surface recombination sites, and a second p-type surface region that provides a substantial change in the dopant concentration.
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申请公布号 |
US7642116(B1) |
申请公布日期 |
2010.01.05 |
申请号 |
US20060476525 |
申请日期 |
2006.06.28 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
HOPPER PETER J.;MIAN MICHAEL;DRURY ROBERT |
分类号 |
H01L31/113 |
主分类号 |
H01L31/113 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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