发明名称 |
Multi-bit-per-cell flash memory device with non-bijective mapping |
摘要 |
To store a plurality of input bits, the bits are mapped to a corresponding programmed state of one or more memory cells and the cell(s) is/are programmed to that corresponding programmed state. The mapping may be many-to-one or may be an "into" generalized Gray mapping. The cell(s) is/are read to provide a read state value that is transformed into a plurality of output bits, for example by maximum likelihood decoding or by mapping the read state value into a plurality of soft bits and then decoding the soft bits.
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申请公布号 |
US7643342(B2) |
申请公布日期 |
2010.01.05 |
申请号 |
US20080045733 |
申请日期 |
2008.03.11 |
申请人 |
RAMOT AT TEL-AVIV UNIVERSITY LTD. |
发明人 |
LITSYN SIMON;SHARON ERAN;ALROD IDAN |
分类号 |
G11C11/34;G06F12/00;G06F13/00;G11C16/06 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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