发明名称 Semiconductor device with a noise prevention structure
摘要 A semiconductor device including a substrate of a first semiconductor type with a pad region and a noise prevention structure in the substrate, on least one side of the pad region. The device further includes the substrate structure, a pad, and a dielectric layer therebetween.
申请公布号 US7642615(B2) 申请公布日期 2010.01.05
申请号 US20080275112 申请日期 2008.11.20
申请人 AIROHA TECHNOLOGY CORP. 发明人 CHEN SHENG-YOW;TSAI DICHI
分类号 H01L29/78;H01L21/761;H01L21/768;H01L29/06;H01L29/40 主分类号 H01L29/78
代理机构 代理人
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