发明名称 |
Apparatus and systems using phase change memories |
摘要 |
Apparatus and systems that use phase-change memory devices are provided. The phase-change memory devices may include multiple phase-change memory cells and a reset pulse generation circuit configured to output multiple sequential reset pulses. Each sequential reset pulse is output to a corresponding one of multiple reset lines. Multiple write driver circuits are coupled to corresponding phase change memory cells and to a corresponding one of the reset lines of the reset pulse generation circuit.
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申请公布号 |
US7643335(B2) |
申请公布日期 |
2010.01.05 |
申请号 |
US20070949342 |
申请日期 |
2007.12.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO BEAK-HYUNG;KIM DU-EUNG;CHO WOO-YEONG |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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