发明名称 Method for erasing flash memory
摘要 A method for erasing flash memory comprises the steps of: setting a critical ending condition; simultaneously erasing selected multiple sectors of the flash memory; stopping simultaneous erasing if one of the selected multiple sectors meets the critical ending condition; and erasing the remainder of each of the selected multiple sectors sequentially.
申请公布号 US7643352(B2) 申请公布日期 2010.01.05
申请号 US20080132153 申请日期 2008.06.03
申请人 ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. 发明人 CHEN CHUNG ZEN
分类号 G11C11/34 主分类号 G11C11/34
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