发明名称 Photo relay having an insulated gate field effect transistor with variable impedance
摘要 A LED is provided to emit a light signal corresponding to an input signal. A PD receives the light signal, and generates a photovoltaic output. A MOSFET receives the photovoltaic output. A FET is provided. A first electrode of the FET is connected to the gate of the MOSFET. A second electrode of the FET is connected to a cathode of the PD through a resistor. A control electrode of the FET is connected to the cathode of the PD. A transistor is provided. A first electrode of the transistor is connected to the gate of the MOSFET. A second electrode of the transistor is connected to the source of the MOSFET. A control electrode of the transistor is connected to the second electrode of the FET. A diode is connected between the second electrode of the FET and the second electrode of the transistor.
申请公布号 US7642502(B2) 申请公布日期 2010.01.05
申请号 US20080331003 申请日期 2008.12.09
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TAJIRI NAOYA
分类号 H01J40/14;H01L31/02;H01L31/12;H01L33/00 主分类号 H01J40/14
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