发明名称 Real-time parameter tuning using wafer thickness
摘要 The invention can provide a method of processing a wafer using a Real-Time Parameter Tuning (RTPT) procedure to receive an input message that can include a pass-through message, a real-time feedforward message, or a real-time optimization message, or any combination thereof. The RTPT procedures can use real-time wafer thickness data to create, modify, and/or use measurement recipe data, measurement profile data, and/or measurement model data. In addition, RTPT procedures can use real-time wafer thickness data to create, modify, and/or use process recipe data, process profile data, and/or process model data.
申请公布号 US7642102(B2) 申请公布日期 2010.01.05
申请号 US20070668572 申请日期 2007.01.30
申请人 TOKYO ELECTRON LIMITED 发明人 FUNK MERRITT;DESHPANDE SACHIN;LALLY KEVIN
分类号 H01L21/66 主分类号 H01L21/66
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